N-Channel Reduced Qg/ Fast Switching MOSFET
Si9422DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.420 @ ...
Description
Si9422DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.420 @ VGS = 10 V
ID (A)
"1.7
D
SO-8
S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
Limit
200 "20 "1.7 "1.3 "12 "12.5 8 2.1 2.5 1.6 –55 to 150
Unit
V
A
mJ A W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70793 S-59610—Rev. D, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State
Symbol
RthJA
Typical
Maximum
50
Unit
_C/W
80
2-1
Si9422DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS =...
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