SI9933ADY

Si9933ADY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.075 @ VGS = –4.5 V –20 20 0.105 @ VGS = –3.0 V 0.115 @ VGS = –2.7 V ID (A) "3.4 "2.9 "2.6 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "12 "3.4 "2.7 "16 –2.0 2.0 Unit V A W 1.3 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70651 S-00652—Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 1 Si9933ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –16 V, VGS = 0 V VDS = –10 V, VGS = 0 V, TJ = 85_C VDS v –5 V, VGS = –4.5 V VDS v –5 V, VGS = –2.7 V VGS = –4.5 V, ID = –3.2 A b D i S Drain-Source On-State O S Resistanc...