SI9934BDY

Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES ID (A) −6.4 −5.1 rDS(on) (W) 0.035 @ VGS = −4.5 V 0.056 @ VGS = −2.5 V D TrenchFETr Power MOSFET S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si9934BDY—E3 Si9934BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −12 "8 Unit V −6.4 −5.1 −20 −1.7 2.0 1.3 −55 to 150 −4.8 −3.9 A −0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72525 S-41578—Rev. C, 23-Aug-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 90 33 Maximum 62.5 110 40 Unit _C/W 1 Si9934BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea...