SI9958DY

Si9958DY Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Ch l 20 rDS(on) (W) 0.10 @ VGS = 10 V 0.12 @ VGS = 6 V 0.15 @ VGS = 4.5 V 0.10 @ VGS = –10 V 0.12 @ VGS = –6V 0.19 @ VGS = –4.5 V ID (A) "3.5 "3 "2.5 "3.5 "3 "2.5 P-Channel P Ch l –20 20 D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "20 "3.5 "2.8 "14 1.7 2.0 1.3 P-Channel –20 "20 "3.5 "2.8 "14 –1.7 Unit V A W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70141 S-01025—Rev. J, 22-May-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 62.5 Unit _C/W 1 Si9958DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V Z G V l D i Current C Z...