SIDC24D30SIC3
Silicon Carbide Schottky Diode
FEATURES: • • • • • Revolutionary semiconductor material Silicon Carbide Sw...
SIDC24D30SIC3
Silicon Carbide
Schottky Diode
FEATURES: Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery Applications: SMPS, snubber, secondary side rectification
A
C
Chip Type
SIDC24D30SIC3
VBR 300V
IF 10A
Die Size 1.706 x 1.38 mm2
Package sawn on foil
Ordering Code Q67050-A4163A103
MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.706x 1.38 mm 1.405 x 1.08 2.354 / 1.548 355 75 0 1649 pcs Photoimide 3200 nm Al 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg
2
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
SIDC24D30SIC3
Maximum Ratings
Parameter Repetitive peak reverse voltage Surge peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current
(depending on wire bond configuration)
Symbol VRRM V RSM IF I FSM I FRM I FMAX Tj , Ts t g
Condition
Value 300 300 10
Unit V
TC =25° C, tP =10 ms sinusoidal TC = 100 ° C, T j = 1 5 0 ° C, D=0.1 TC =25° C, tp=10µs
36 45 100 -55...+175
A
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