SJD00074BED

Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification 7.5±0.2 3.8±0.2 Unit: mm 4.5±0.2 ■ Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −50 −5 −2 −3 1.5 150 −55 to +150 Unit V V V A A W °C °C 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emiter open) Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −2 V, IC = −200 mA VCE = −2 V, IC = −1 A IC = −1 A, IB = −50 mA IC = −1...