SKM200GB124

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM = –ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values Units 1200 1200 290 / 200 580 / 400 ± 20 1350 –40 ... +150 (125) 2500 Class F 40/125/56 195 / 130 580 / 400 1450 10 500 V V A A V W °C V SEMITRANS® M Low Loss IGBT Modules SKM 200 GB 124 D Inverse Diode A A A A2s SEMITRANS 3 Characteristics Symbol Conditions 1) V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VF = VEC VF = VEC VTO rt IRRM Qrr Rthjc Rthjc Rthch VGE = 0, IC = 4 mA VGE = VCE, IC = 6 mA Tj = 25 °C VGE = 0 VCE = VCES Tj = 125 °C VGE = 20 V, VCE = 0 IC = 150 A VGE = 15 V; IC = 200 A Tj = 25 (125) °C VCE = 20 V, IC = 150 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = –15 V / +15 V3) IC = 150 A, ind. load RGon = RGoff = 7Ω Tj = 125 °C min. typ. – 5,5 0,4 12 – 2,1(2,4) 2,5(3,0) – – 11 1,6 0,8 – 75 50 520 50 21 19 2,0(1,8) 2,25(2,05) 1,1 – 78 19,5 – – – max. – 6,5 14 – 0,32 2,45(2,85) – – 700 15 2 1 20 – – – – – – 2,5 – 1,2 7 – – 0,09 0,25 0,038 Units V V mA mA µA V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V mΩ A µC °C/W °C/W °C/W ≥ VCES 4,5 – – – – – 62 – – – – – – – – – – – – – – – – – – – – GB Features MOS input (voltage controlled) N c...