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SKP10N60A Dataheets PDF



Part Number SKP10N60A
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Fast IGBT
Datasheet SKP10N60A DatasheetSKP10N60A Datasheet (PDF)

SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous generation combined with low conduction losses C  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter G E  NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability  Very soft, fast recovery anti-parallel Em.

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SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous generation combined with low conduction losses C  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter G E  NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability  Very soft, fast recovery anti-parallel Emitter Controlled Diode PG-TO-220-3-1 PG-TO-247-3  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1 for target applications  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP10N60A SKW10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.3V 150C K10N60 PG-TO-220-3-1 600V 10A 2.3V 150C K10N60 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  600V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC  600V, Tj  150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj , Tstg Ts 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Value 600 20 10.6 40 40 21 10 42 20 10 92 -55...+150 260 Unit V A V s W C °C Rev. 2.4 12.06.2013 SKP10N60A SKW10N60A Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Symbol Conditions RthJC RthJCD RthJA PG-TO-220-3-1 PG-TO-247-3-21 Max. Value 1.35 2.4 62 40 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage V( B R ) C E S VG E = 0 V , I C = 5 0 0 A Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Dynamic Characteristic VCE(sat) VF VGE(th) ICES IGES gfs VGE = 15V, IC=10A Tj=25C Tj=150C VGE=0V, IF=10A Tj=25C Tj=150C IC=300A,VCE=VGE VCE=600V,VGE=0V Tj=25C Tj=150C VCE=0V,VGE=20V VCE=20V, IC=10A Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VCE=25V, VGE=0V, f=1MHz Gate charge QGate Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current2) LE IC(SC) VCC=480V, IC=10A VGE=15V PG-TO-220-3-1 PG-TO-247-3-21 VGE=15V,tSC10s VCC  600V, Tj  150C min. 600 1.7 - 1.2 3 - - - Value Typ. - 2 2.3 1.4 1.25 4 6.7 550 62 42 52 7 13 100 Unit max. -V 2.4 2.8 1.8 1.65 5 40 1500 100 - A .


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