Document
SKP10N60A SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation combined with low conduction losses
C
Short circuit withstand time – 10 s Designed for:
- Motor controls - Inverter
G E
NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
- parallel switching capability Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
PG-TO-247-3
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type SKP10N60A SKW10N60A
VCE IC VCE(sat) Tj Marking Package
600V 10A
2.3V
150C K10N60 PG-TO-220-3-1
600V 10A
2.3V
150C K10N60 PG-TO-247-3
Maximum Ratings Parameter
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj , Tstg Ts
1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Value 600
20 10.6 40 40
21 10 42 20 10
92 -55...+150
260
Unit V A
V s W C °C
Rev. 2.4 12.06.2013
SKP10N60A SKW10N60A
Thermal Resistance Parameter
Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient
Symbol Conditions
RthJC RthJCD RthJA
PG-TO-220-3-1 PG-TO-247-3-21
Max. Value
1.35
2.4
62 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage V( B R ) C E S VG E = 0 V , I C = 5 0 0 A
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Dynamic Characteristic
VCE(sat)
VF
VGE(th) ICES
IGES gfs
VGE = 15V, IC=10A Tj=25C Tj=150C VGE=0V, IF=10A Tj=25C Tj=150C IC=300A,VCE=VGE VCE=600V,VGE=0V Tj=25C Tj=150C VCE=0V,VGE=20V VCE=20V, IC=10A
Input capacitance Output capacitance Reverse transfer capacitance
Ciss Coss Crss
VCE=25V, VGE=0V, f=1MHz
Gate charge
QGate
Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current2)
LE IC(SC)
VCC=480V, IC=10A VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC10s VCC 600V, Tj 150C
min.
600
1.7 -
1.2 3
-
-
-
Value Typ.
-
2 2.3
1.4 1.25
4
6.7
550 62 42 52
7 13 100
Unit max.
-V
2.4 2.8
1.8 1.65
5
40 1500 100
-
A
.