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SL12

Formosa MS

Low VF Chip Schottky Barrier Diodes

Low VF Chip Schottky Barrier Diodes SL12 AND SL14 Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0...


Formosa MS

SL12

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Description
Low VF Chip Schottky Barrier Diodes SL12 AND SL14 Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 1.0 10 Rq JA CJ TSTG -55 80 130 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SL12 SL14 V RRM (V) *1 V RMS (V) 14 28 *2 VR *3 VF *4 Operating temperature ( o C) -55 to +125 (V) 20 40 (V) 0.38 0.40 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward volta...




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