Low VF Chip Schottky Barrier Diodes
SL12-M AND SL14-M
Silicon epitaxial planer type
Formosa MS
SOD-123
0.161(4.1) 0.14...
Low VF Chip
Schottky Barrier Diodes
SL12-M AND SL14-M
Silicon epitaxial planer type
Formosa MS
SOD-123
0.161(4.1) 0.146(3.7) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.063(1.6) 0.055(1.4)
0.071(1.8) 0.055(1.4)
0.110(2.8) 0.094(2.4)
0.035(0.9) Typ.
0.035(0.9) Typ.
Mechanical data
Case : Molded plastic, JEDEC SOD123 / MINI SMA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.04 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 42 130 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE L2 L4
V RRM
20 40
*1
V RMS
14 28
*2
VR
*3
VF
*4
Operating temperature (o C) -55 to +125
(V) SL12 SL14
(V)
(V) 20 40
(V) 0.38 0.40
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximu...