Fast IGBT
SGB10N60A
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduction los...
Description
SGB10N60A
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for: - Motor controls - Inverter
NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO-263-3-2
Type SGB10N60A
VCE
IC
VCE(sat)
Tj
Marking
Package
600V 10A
2.3V
150°C G10N60A PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering MSL1)
Symbol VCE IC
ICpuls VGE EAS
tSC Ptot Tj , Tstg
Value
Unit
600
V
A 20 10.6
40
40
±20
V
70
mJ
10
µs
92
W
-55...+150
°C
245
1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 July 07
SGB10N60A
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction...
Similar Datasheet