SGD102

Ordering number :EN5581 SGD102 GaAs Schottky Barrier Diode C to X Band, Mixer, Modulator Applications Features · Ultrasmall-sized package. · Less parasitic components, conversion loss. Package Dimensions unit:mm 1276 [SGD102] 1:No Contact 2:Anode 3:Cathode SANYO:CP3R Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Junction Temperature Storage Temperature Symbol VRM VR IFM IO Tj Tstg Conditions Ratings 4.5 4.0 150 50 150 –55 to +150 Unit V V mA mA ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Reverse Voltage Interterminal Capacitance Series Resistance Conversion Loss Symbol VF VR Ct RS LC IF=20mA IR=10µA V=0V, f=1MHz IF=20mA Measured using the DC incremental methode* f=10.678GHz, P=10mW 4.0 Conditions Ratings min typ 0.8 6.0 0.3 1.5 4.0 0.4 3.0 max 0.9 Unit V V pF Ω dB Note)*: Conversion loss measurement diagram For measurement of conversion loss, do a sampling from the lot population and use the DC incremental method for measurement. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/D1096GI/ (KOTO) X-8179 No.5581-1/2 SGD102 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, th...