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SGL34-30

Formosa MS

Silicon epitaxial planer type

MINI-MELF Schottky Barrier Diodes SGL34-20 THRU SGL34-60 Silicon epitaxial planer type Formosa MS DO-213AA (GL34) Fea...


Formosa MS

SGL34-30

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Description
MINI-MELF Schottky Barrier Diodes SGL34-20 THRU SGL34-60 Silicon epitaxial planer type Formosa MS DO-213AA (GL34) Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. .140(3.6) .130(3.3) .015(.40) .012(.30) SOLDERABLE ENDS Exceeds environmental standards of MIL-S-19500 / 228 .063(1.6) .055(1.4) Low leakage current. Mechanical data Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-213AA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.036 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 0.8 10 0.5 10 Rq JA CJ TSTG -55 75 80 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE - V RRM (V) *1 V RMS (V) 14 21 28 35 42 *2 VR *3 VF *4 Operating temperature ( o C) (V) 20 30 40 50 60 (V) SGL34-20 SGL34-30 SGL34-40 SGL34-50 SGL34-60 20 30 40 50 60 *1 Repetitive peak reverse voltage 0.50 -55 to +125 *2 RMS voltage *3 Continuous reverse voltage 0.70 -55 t...




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