SGP04N60

SGP04N60, SGD04N60, Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGB04N60 SGU04N60 C G E P-TO-251-3-1 (I-PAK) (TO-251AA) P-TO-252-3-1 (D-PAK) (TO-252AA) P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP04N60 SGB04N60 SGD04N60 SGU04N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 4A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-252AA(DPAK) TO-251AA(IPAK) Ordering Code Q67040-S4443 Q67040-S4442 Q67041-A4708 Q67040-S4444 Symbol VCE IC Value 600 9.4 4.9 Unit V A ICpul s VGE EAS 19 19 ±20 25 V mJ tSC Ptot 10 50 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 SGP04N60, SGD04N60, Thermal R...