SHF-0186K

Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0186K is +28 dBm when biased for Class AB operation at 8V and 100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers. Gain vs. Frequency SHF-0186K DC-3 GHz, 0.5 Watt AlGaAs/GaAs HFET Product Features Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB compression point Output Third Order Intercept Point Saturated Drain Current VDS = 3V, VGS = 0V Transconductance VDS = 3V, VGS = 0V Pinch-Off Voltage VDS = 3V, IDQ = 1mA Gate-to-Source Breakdown Voltage, Igs = 1.2mA Gate-to-Drain Breakdown Voltage, Igd = 1.2mA Thermal Resistance (junction to lead) Gmax S21 +28 dBm P1dB Typical +40 dBm Output IP3 Typical High Drain Efficiency: Up to 46% at Class AB 17 dB Gain at 900 MHz (Application circu...