SHF-0289

Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA. The +46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. They are well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers. Adequate heat sinking must be provided for this part to avoid exceeding the maximum junction temperature. Methods include the use of screws near the device, and filled vias beneath the part to the ground plane. Refer to “Mounting and Thermal Considerations” section on page 7 for more information. Maximum Available Gain vs Frequency Vds = 8V, Idq = 250mA 30 25 20 SHF-0289 DC-3 GHz, 1.0 Watt GaAs HFET Preliminary Preliminary Product Features Patented GaAs Heterostructure FET Technology +30dBm Output Power at 1dB Compression +46dBm Output IP3 High Drain Efficiency: Up to 40% at Class AB 13 dB Gain at 900MHz (Application circuit) 13 dB Gain at 1900MHz (Application circuit) Applications Analog and Digital Wireless System Cellular PCS, CDPD, Wireless Data, Pagers GMax(dB) 15 10...