SI1021R

P-Channel 60 V (D-S) MOSFET Si1021R Vishay Siliconix PRODUCT SUMMARY VDS(min.) (V) - 60 RDS(on) () 4.0 at VGS = - 10 V VGS(th) (V) - 1 to 3.0 ID (mA) - 190 SC-75A (SOT-416) G1 S2 3D Marking Code: F Top View Ordering Information: Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs High-Side Switching Low On-Resistance: 4  Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 20 pF (typ.) Miniature Package ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Power Supply Converter Circuits Solid-State Relays BENEFITS Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer Small Board Area ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb TA = 25 °C TA = 85 °C Power Dissipationa Maximum Junction-to-Ambienta TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. VDS VGS ID IDM PD RthJA TJ, Tstg - 60 ± 20 - 190 - 135 - 650 250 130 500 - 55 to 150 Unit V mA mW °C/W °C Docum...