SI1029X

Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 1.40 at VGS = 10 V 60 3 at VGS = 4.5 V 4 at VGS = - 10 V P-Channel - 60 8 at VGS = - 4.5 V ID (mA) 500 200 - 500 - 25 S1 1 G1 2 SC-89 6 D1 5 G2 Marking Code: H D2 3 4 S2 Top View Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 1.40  P-Channel, 4  Low Threshold: ± 2 V (typ.) Fast Switching Speed: 15 ns (typ.) Gate-Source ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits APPLICATIONS Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 60 - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 320 230 305 - 200 - 190 220 - 145 - 135 Pulsed Drain Currentb IDM 650 - 650 Continuous Source Current (Diode Conduction)a IS 450 380 - 450 - 380 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 280 145 250 130 280 145 250 130 Operating Junction and St...