P-Channel MOSFET
P-Channel 20 V (D-S) MOSFET
Si1413EDH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) (Ω) 0.115 at VGS = - 4.5...
Description
P-Channel 20 V (D-S) MOSFET
Si1413EDH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) (Ω) 0.115 at VGS = - 4.5 V 0.155 at VGS = - 2.5 V 0.220 at VGS = - 1.8 V
ID (A) - 2.9 - 2.4 - 2.0
SOT-363 SC-70 (6-LEADS)
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power MOSFET: 1.8 V Rated
ESD Protected: 3000 V
Thermally Enhanced SC-70 Package
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Load Switching PA Switch Level Switch
D
D1
6D
D2
5D
G3
4S
Top View
Marking Code
YY
BA XX
Lot Traceability and Date Code
Part # Code
Ordering Information: Si1413EDH-T1-E3 (Lead (Pb)-free) Si1413EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
3k G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C TA = 85 °C
TA = 25 °C TA = 85 °C
VDS VGS
ID
IDM IS
PD
TJ, Tstg
- 20
± 12
- 2.9
- 2.3
- 2.0
- 1.6
-8
- 1.4
- 0.9
1.56 1.0
0.81 0.52
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board.
t≤5s Steady State Steady State
Symbol RthJA RthJF
Typical 60 100 34
Maximum 80 125 45
Unit °C/W
Document Number: 71396 S10-0935-Rev. B, 19...
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