SI1501DL

Si1501DL Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET PRODUCT SUMMARY Channel N-Channel VDS (V) 20 rDS(on) (W) 2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V 3.8 @ VGS = −4.5 V 5.0 @ VGS = −2.5 V ID (mA) 250 150 −180 −100 P Channel P-Channel −20 SC-70 (6-Leads) S1 G1 D2 1 2 3 Top View 6 5 4 Marking Code YY Lot Traceability and Date Code Part # Code D1 G2 S2 RE XX SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg N-Channel 20 "8 250 200 500 0.20 0.13 P-Channel −20 "8 −180 −140 −500 Unit V mA W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Symbol RthJA Limit 625 (Total) Unit _C/W Document Number: 71303 S-03840—Rev. B, 21-May-01 www.vishay.com S 1 Si1501DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain Source Breakdown Voltage Drain-Source Gate Threshold Voltage Gate Body Leakage Gate-Body V(BR)DSS VGS(th) GS( h) IGSS VGS = 0 V, ID = 10 mA VGS = 0 V, ID = −10 mA VDS = VGS, ID = 50 mA VDS = VGS, ID = −50 mA VDS = 0 V, V VGS = "8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS =...