MOSFET
Complementary 20 V (D-S) MOSFET
Si1551DL
Vishay Siliconix
PRODUCT SUMMARY
N-Channel P-Channel
VDS (V) 20
- 20
RDS(o...
Description
Complementary 20 V (D-S) MOSFET
Si1551DL
Vishay Siliconix
PRODUCT SUMMARY
N-Channel P-Channel
VDS (V) 20
- 20
RDS(on) (Ω) 1.9 at VGS = 4.5 V 3.7 at VGS = 2.7 V 4.2 at VGS = 2.5 V 0.995 at VGS = - 4.5 V 1.600 at VGS = - 2.7 V 1.800 at VGS = - 2.5 V
ID (A) 0.30 0.22 0.21 - 0.44 - 0.34 - 0.32
Qg (Typ.) 0.72
0.52
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET: 2.5 V Rated
Compliant to RoHS Directive 2002/95/EC
SOT-363 SC-70 (6-LEADS)
S1 1 G1 2 D2 3
6 D1 5 G2 4 S2
Top View
Marking Code
YY
RD XX
Lot Traceability and Date Code
Part # Code
Ordering Information: Si1551DL-T1-E3 (Lead (Pb)-free) Si1551DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS 20
- 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 85 °C
ID
0.30 0.22
0.29 0.21
- 0.44 - 0.31
- 0.41 - 0.30
Pulsed Drain Current
IDM 0.6
- 1.0
Continuous Source Current (Diode Conduction)a
IS
0.25
0.23
- 0.25
- 0.23
Maximum Power Dissipationa
TA = 25 °C TA = 85 °C
PD
0.30 0.16
0.27 0.14
0.30 0.16
0.27 0.14
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta
t≤5s Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes: a. Surface mounted on 1"...
Similar Datasheet
- SI1551DL MOSFET - Vishay Siliconix