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SI1912EDH Dataheets PDF



Part Number SI1912EDH
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual N-Channel MOSFET
Datasheet SI1912EDH DatasheetSI1912EDH Datasheet (PDF)

Dual N-Channel 20 V (D-S) MOSFET Si1912EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450 at VGS = 1.8 V ID (A) 1.28 1.13 1.0 SOT-363 SC-70 (6-LEADS) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch D1 D2 S1 1 G1 2 D2 3 6 .

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Dual N-Channel 20 V (D-S) MOSFET Si1912EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450 at VGS = 1.8 V ID (A) 1.28 1.13 1.0 SOT-363 SC-70 (6-LEADS) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch D1 D2 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Marking Code CA XX YY Lot Traceability and Date Code G1 Part # Code 1k 1k G2 Top View Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode-Current (Diode Conduction)a TA = 25 °C TA = 85 °C Maximum Power Dissipationa TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg 1.28 0.92 0.61 0.74 0.38 Steady State 20 ± 12 1.13 0.81 4 0.48 0.57 0.30 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. Symbol RthJA RthJF Typical 130 170 80 Maximum 170 220 100 Unit V A W °C Unit °C/W Document Number: 71408 S10-1054-Rev. B, 03-May-10 www.vishay.com 1 Si1912EDH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VDS = VGS , ID = 100 µA VDS = 0 V, VGS = ± 4.5 V VDS = 0 V, VGS = ± 12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.13 A VGS = 2.5 V, ID = 0.99 A VGS = 1.8 V, ID = 0.2 A VDS = 10 V, ID = 1.13 A IS = 0.48 A, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. VDS = 10 V, VGS = 4.5 V, ID = 1.13 A VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω Min. Typ. Max. Unit 0.45 ±1 ± 10 1 5 2 0.220 0.280 0.281 0.360 0.344 0.450 2.6 0.8 1.2 V µA mA µA A Ω S V 0.65 0.2 0.23 45 85 350 210 1 70 130 530 320 nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 000 IGSS - Gate Current (mA) I GSS - Gate Current (µA) 1000 8 100 6 10 TJ = 150 °C 41 TJ = 25 °C 0.1 2 0.01 0 0 4 8 12 16 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 0.001 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage www.vishay.com 2 Document Number: 71408 S10-1054-Rev. B, 03-May-10 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 2.0 VGS = 5 V thru 2 V 1.5 1.0 1.5 V 1.5 1.0 Si1912EDH Vishay Siliconix TC = - 55 °C 25 °C 125 °C I D - Drain Current (A) ID - Drain Current (A) R DS(on) - On-Resistance (Ω) 0.5 0.0 0 0.6 1V 123 VDS - Drain-to-Source Voltage (V) Output Characteristics 4 0.5 0.4 VGS = 1.8 V 0.3 0.2 VGS = 2.5 V VGS = 4.5 V 0.1 0.0 0.0 0.5 1.0 1.5 ID - Drain Current (A) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 1.13 A 4 2.0 VGS - Gate-to-Source Voltage (V) 3 2 1 0 0.0 0.3 0.6 0.9 1.2 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71408 S10-1054-Rev. B, 03-May-10 1.5 RDS(on) - On-Resistance (Normalized) C - Capacitance (pF) 0.5 0.0 0.0 0.5 1.0 1.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 140 120 100 Ciss 80 60 40 20 Crss 0 0 Coss 4 8 12 16 VDS - Drain-to-Source Voltage (V) Capacitance 1.6 VGS = 4.5 V ID = 1.13 A 1.4 2.0 20 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1912EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 0.6 TJ = 150 °C 1 0.5 0.4 ID = 1.13 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 25 °C 0.3 0.2 0.1 0.1 0 0.2 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.2 0.


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