Document
Dual N-Channel 20 V (D-S) MOSFET
Si1912EDH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450 at VGS = 1.8 V
ID (A) 1.28 1.13 1.0
SOT-363 SC-70 (6-LEADS)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Load Switching • PA Switch • Level Switch
D1
D2
S1 1 G1 2 D2 3
6 D1 5 G2 4 S2
Marking Code CA XX
YY
Lot Traceability and Date Code
G1
Part # Code
1k
1k G2
Top View
Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Continuous Diode-Current (Diode Conduction)a
TA = 25 °C TA = 85 °C
Maximum Power Dissipationa
TA = 25 °C TA = 85 °C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS
PD
TJ, Tstg
1.28 0.92
0.61 0.74 0.38
Steady State
20
± 12
1.13
0.81
4
0.48
0.57
0.30
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t≤5s Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes: a. Surface mounted on 1" x 1" FR4 board.
Symbol RthJA RthJF
Typical 130 170 80
Maximum 170 220 100
Unit V
A
W °C
Unit °C/W
Document Number: 71408 S10-1054-Rev. B, 03-May-10
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Si1912EDH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea Diode Forward Voltagea Dynamicb
VGS(th) IGSS
IDSS ID(on)
RDS(on)
gfs VSD
VDS = VGS , ID = 100 µA VDS = 0 V, VGS = ± 4.5 V VDS = 0 V, VGS = ± 12 V
VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.13 A VGS = 2.5 V, ID = 0.99 A VGS = 1.8 V, ID = 0.2 A VDS = 10 V, ID = 1.13 A IS = 0.48 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 1.13 A
VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω
Min. Typ. Max. Unit
0.45 ±1 ± 10 1 5
2 0.220 0.280 0.281 0.360 0.344 0.450 2.6 0.8 1.2
V µA mA µA A
Ω
S V
0.65 0.2 0.23 45 85 350 210
1
70 130 530 320
nC ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 10 000
IGSS - Gate Current (mA) I GSS - Gate Current (µA)
1000 8
100
6 10 TJ = 150 °C
41 TJ = 25 °C
0.1 2
0.01
0 0 4 8 12 16
VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage
0.001 0
3 6 9 12 15
VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage
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Document Number: 71408 S10-1054-Rev. B, 03-May-10
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0 2.0
VGS = 5 V thru 2 V 1.5
1.0
1.5 V
1.5 1.0
Si1912EDH
Vishay Siliconix
TC = - 55 °C 25 °C 125 °C
I D - Drain Current (A)
ID - Drain Current (A)
R DS(on) - On-Resistance (Ω)
0.5 0.0
0
0.6
1V
123
VDS - Drain-to-Source Voltage (V) Output Characteristics
4
0.5
0.4 VGS = 1.8 V
0.3
0.2
VGS = 2.5 V VGS = 4.5 V
0.1
0.0 0.0
0.5 1.0 1.5
ID - Drain Current (A) On-Resistance vs. Drain Current
5
VDS = 10 V ID = 1.13 A 4
2.0
VGS - Gate-to-Source Voltage (V)
3
2
1
0 0.0 0.3 0.6 0.9 1.2
Qg - Total Gate Charge (nC) Gate Charge
Document Number: 71408 S10-1054-Rev. B, 03-May-10
1.5
RDS(on) - On-Resistance (Normalized)
C - Capacitance (pF)
0.5
0.0 0.0
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
140
120
100 Ciss
80
60
40
20 Crss
0 0
Coss
4 8 12 16 VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V ID = 1.13 A 1.4
2.0 20
1.2
1.0
0.8
0.6 - 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature
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Si1912EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2 0.6
TJ = 150 °C 1
0.5 0.4
ID = 1.13 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 25 °C
0.3 0.2
0.1
0.1 0
0.2
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage
1.2
0.