SI2302ADS

N-Channel 2.5-V (G-S) MOSFET Si2302ADS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.060 at VGS = 4.5 V 0.115 at VGS = 2.5 V ID (A) 2.4 2.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg 20 ±8 2.4 2.1 1.9 1.7 10 0.94 0.6 0.9 0.7 0.57 0.46 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Symbol RthJA Typical 115 140 Notes: a. Surface mounted on FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm Maximum 140 175 Unit V A W °C Unit °C/W Document Number: 71831 www.vishay.com S11-2000-Rev. J, 10-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302ADS Vishay Siliconix SPECIFICATIONS...