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SI2304DS Dataheets PDF



Part Number SI2304DS
Manufacturers NXP
Logo NXP
Description N-channel FET
Datasheet SI2304DS DatasheetSI2304DS Datasheet (PDF)

SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. 2. Features s TrenchMOS™ technology s Very fast switching s Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pin 1 2 3 Pinning .

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SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. 2. Features s TrenchMOS™ technology s Very fast switching s Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MSB003 MBB076 Simplified outline 3 Symbol d s SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 5 V Tsp = 25 °C VGS = 10 V; ID = 500 mA VGS = 4.5 V; ID = 500 mA Min − − − − − − Typ − − − − − − Max 30 1.7 0.83 150 117 190 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 5 V; Figure 2 and 3 Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; Figure 1 Conditions Tj = 25 to 150 °C Tj = 25 to 150 °C; RGS = 20 kΩ Min − − − − − − − −65 −65 − − Max 30 30 ±20 1.7 1.1 7.5 0.83 +150 +150 0.83 3.3 Unit V V V A A A W °C °C A A Source-drain diode 9397 750 08526 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 — 17 August 2001 2 of 12 Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor 03aa17 03aa25 120 Pder (%) 100 120 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 50 100 150 Tsp ( C) o 0 200 0 50 100 150 Tsp ( C) o 200 P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) VGS ≥ 10 V ID I der = ------------------- × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. 102 ID (A) 10 RDSon = VDS / ID Fig 2. Normalized continuous drain current as a function of solder point temperature. 003aaa120 1 P tp = 10 µs 1 ms tp T δ= D.C. 10 ms 100 ms 10-1 tp T t 10-2 10-1 1 10 VDS (V) 102 Tsp = 25°C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08526 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 — 17 August 2001 3 of 12 Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Rth(j-sp) Thermal characteristics Conditions mounted on a metal clad substrate; Figure 4 Value Unit 100 K/W thermal resistance from junction to solder point Symbol Parameter 7.1 Transient thermal impedance 103 Zth(j-sp) (K/W) 102 δ= 0.02 0.05 0.1 10 0.2 0.5 Single pulse tp T t P 003aaa121 δ= tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 08526 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 — 17 August 2001 4 of 12 Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 150 °C Tj = −55 °C IDSS drain-source leakage current VDS = 30 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±10 V; VDS = 0 V VGS = 10 V; ID = 500 mA; Figure 7 and 8 Tj = 25 °C VGS = 4.5 V; ID = 500 mA Tj = 25 °C Tj = 150 °C Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 0.83 A; VGS = 0 V; Figure 12 reverse recovery time IS = 1 A; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 25 V VDD = 15 V; RL = 15 Ω; VGS = 10 V VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 VDS = 10 V; ID = 1 A VDD = 15 V; .


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