SI2305DS

Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) 0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V ID (A) "3.5 "3 "2 TO-236 (SOT-23) G 1 3 S 2 D Top View Si2305DS (A5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –8 "8 "3.5 "2.8 "12 –1.6 1.25 0.8 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v5 sec. Document Number: 70833 S-56947—Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 100 Unit _C/W 130 2-1 Si2305DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –4.5 V VDS v –5 V, VGS = –2.5 V VGS = –4.5 V, ID = –3.5 A a D i S Drain-Source On-Resistance O R i Symbol Test Conditions Min Ty...