SI2316DS

Si2316DS New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES D TrenchFETr Power MOSFET ID (A) 3.4 2.6 rDS(on) (W) 0.050 @ VGS = 10 V 0.085 @ VGS = 4.5 V APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2316DS (C6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS 5 sec 30 "20 3.4 Steady State Unit V 2.9 2.3 16 0.8 A ID IDM IS 2.7 0.96 PD TJ, Tstg 0.6 –55 to 150 0.7 0.45 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Steady State Steady State RthJA RthJF Symbol Typical 100 140 60 Maximum 130 175 75 Unit _C/W Document Number: 71798 S-05481—Rev. A, 21-Jan-02 www.vishay.com 1 Si2316DS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage ID(on) rD...