SI2341DS

P-Channel 30-V (D-S) MOSFET Si2341DS Vishay Siliconix PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.072 at VGS = - 10 V 0.120 at VGS = - 4.5 V ID (A)b - 2.8 - 2.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G1 S2 3D Top View Si2341DS (F1)* * Marking Code Ordering Information: Si2341DS-T1-E3 (Lead (Pb)-free) Si2341DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA = 25 °C TA = 70 °C ID IDM IS - 2.8 - 2.2 - 0.75 - 12 - 2.5 - 2.0 - 0.6 Power Dissipationb TA = 25 °C TA = 70 °C PD 0.9 0.71 0.57 0.45 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t ≤ 5 s. c. Surface mounted on FR4 board. Document Number: 72263 S09-1503-Rev. C, 10-Aug-09 Symbol RthJA RthJF Typical 115 140 60 Maximum 140 175 75 Unit °C/W www.vishay.com 1 Si2341DS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise no...