SI3434DV

Si3434DV New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.034 @ VGS = 4.5 V 0.050 @ VGS = 2.5 V ID (A) 6.1 5.0 D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area APPLICATIONS D Li-lon Battery Protection (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (4) S N-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 5 secs 30 "12 6.1 Steady State Unit V 4.6 3.6 30 A 1.0 1.14 0.73 –55 to 150 W _C ID IDM IS PD TJ, Tstg 4.9 1.7 2.0 1.3 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71610 S-03617—Rev. A, 17-Apr-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 40 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3434DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS ...