Document
Si3442BDV
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.057 @ VGS = 4.5 V 0.090 @ VGS = 2.5 V
ID (A)
4.2 3.4
TSOP-6 Top View
1 3 mm 6 5 (3) G 4
(1, 2, 5, 6) D
2
3
2.85 mm
(4) S N-Channel MOSFET
Ordering Information: Si3442BDV-T1—E3 Marking Code: 2Bxxx
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
20 "12 4.2 3.4 20 1.4 1.67 1.07
Steady State
Unit
V
3.0 2.4 A
0.72 0.86 0.55 −55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72504 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
75 120 70
Maximum
100 145 85
Unit
_C/W
1
Si3442BDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V VDS = 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 4 A VGS = 2.5 V, ID = 3.4 A VDS = 10 V, ID = 4.0 A IS = 1.6 A, VGS = 0 V 10 4 0.045 0.070 11.3 0.75 1.2 0.057 0.090 W S V 0.6 1.8 "100 1 5 V nA mA
Symbol
Test Condition
Min
Typ
Max
Unit
A
rDS(on) gfs VSD
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.6 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 4.0 A 3 0.65 0.95 2.7 35 50 20 15 30 55 75 30 25 60 ns W 5 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 5 thru 3.5 V 16 I D − Drain Current (A) 3V I D − Drain Current (A) 16 25_C 12 125_C 20 TC = −55_C
Transfer Characteristics
12 2.5 V
8
8
4
2V 1.5 V 0 1 2 3 4 5
4
0 VDS − Drain-to-Source Voltage (V) www.vishay.com
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS − Gate-to-Source Voltage (V) Document Number: 72504 S-40424—Rev. C, 15-Mar-04
2
Si3442BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current.