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SI3442BDV Dataheets PDF



Part Number SI3442BDV
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel 2.5-V (G-S) MOSFET
Datasheet SI3442BDV DatasheetSI3442BDV Datasheet (PDF)

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.057 @ VGS = 4.5 V 0.090 @ VGS = 2.5 V ID (A) 4.2 3.4 TSOP-6 Top View 1 3 mm 6 5 (3) G 4 (1, 2, 5, 6) D 2 3 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3 Marking Code: 2Bxxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current.

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Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.057 @ VGS = 4.5 V 0.090 @ VGS = 2.5 V ID (A) 4.2 3.4 TSOP-6 Top View 1 3 mm 6 5 (3) G 4 (1, 2, 5, 6) D 2 3 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3 Marking Code: 2Bxxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 20 "12 4.2 3.4 20 1.4 1.67 1.07 Steady State Unit V 3.0 2.4 A 0.72 0.86 0.55 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72504 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 70 Maximum 100 145 85 Unit _C/W 1 Si3442BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V VDS = 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 4 A VGS = 2.5 V, ID = 3.4 A VDS = 10 V, ID = 4.0 A IS = 1.6 A, VGS = 0 V 10 4 0.045 0.070 11.3 0.75 1.2 0.057 0.090 W S V 0.6 1.8 "100 1 5 V nA mA Symbol Test Condition Min Typ Max Unit A rDS(on) gfs VSD Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.6 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 4.0 A 3 0.65 0.95 2.7 35 50 20 15 30 55 75 30 25 60 ns W 5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3.5 V 16 I D − Drain Current (A) 3V I D − Drain Current (A) 16 25_C 12 125_C 20 TC = −55_C Transfer Characteristics 12 2.5 V 8 8 4 2V 1.5 V 0 1 2 3 4 5 4 0 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72504 S-40424—Rev. C, 15-Mar-04 2 Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current.


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