SI3447BDV

P-Channel 12-V (D-S) MOSFET Si3447BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.040 at VGS = - 4.5 V 0.053 at VGS = - 2.5 V 0.072 at VGS = - 1.8 V ID (A) - 6.0 - 5.2 - 4.5 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET: 1.8 V Rated Ultra Low On-Resistance Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch PA Switch 3 mm TSOP-6 Top View 16 25 (4) S (3) G 34 2.85 mm Ordering Information: Si3447BDV-T1-E3 (Lead (Pb)-free) Si3447BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: B7xxx (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID - 6.0 - 4.3 - 4.5 - 3.3 Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.0 1.0 1.1 0.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 62.5 110 36 Unit °C/W Document Number: 72020 S09-0702-Rev. C, 27-Apr-09 www.vishay.com 1 Si3447BDV Vishay Siliconix SPECIFICATIONS TJ =...