SI3493DV

Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.027 @ VGS = −4.5 V −20 0.035 @ VGS = −2.5 V 0.048 @ VGS = −1.8 V FEATURES ID (A) −7 −6.2 −5.2 21 Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance APPLICATIONS D Load Switch D PA Switch D Battery Switch TSOP-6 Top View 1 3 mm 6 (3) G 2 5 (4) S 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3493DV-T1 Si3493DV-T1—E3 (Lead (Pb)-Free) Marking Code: 93xxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −20 "8 Unit V −7 −3.6 −20 −1.7 2.0 1.0 −55 to 150 −5.3 −3.9 A −0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71936 S-41796—Rev. C, 04-Oct-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3493DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain ...