SI3552DV

Si3552DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.105 at VGS = 10 V 0.175 at VGS = 4.5 V P-Channel - 30 0.200 at VGS = - 10 V 0.360 at VGS = - 4.5 V ID (A) 2.5 2.0 - 1.8 - 1.2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC G1 3 mm S2 G2 TSOP-6 Top View 16 25 34 D1 S1 D2 D1 S2 G2 G1 2.85 mm Ordering Information: Si3552DV -T1-E3 (Lead (Pb)-free) Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 2.5 - 1.8 2.0 - 1.2 Pulsed Drain Current IDM 8 -7 Continuous Source Current (Diode Conduction)a, b IS 1.05 - 1.05 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 1.15 0.73 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Lead Steady State Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. Symbol RthJA RthJL Typical 93 130 75 Maximum 110 150 90 Unit V A W °C Unit °C/W Document Number: 70971 S09-2110-Rev. C, 12-Oct-09 www.vishay.com 1 Si3552DV Vishay Siliconix SPECIFICATIONS TJ ...