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SI3850DV Dataheets PDF



Part Number SI3850DV
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Complementary MOSFET Half-Bridge (N- and P-Channel)
Datasheet SI3850DV DatasheetSI3850DV Datasheet (PDF)

Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.500 @ VGS = 4.5 V 0.750 @ VGS = 3.0 V 1.00 @ VGS = –4.5 V 1.30 @ VGS = –3.0 V ID (A) "1.2 "1.0 "0.85 "0.75 P-Channel –20 S2 TSOP-6 Top View G1 D G2 1 6 S1 D D 2 5 G2 3 4 S2 G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Conti.

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Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.500 @ VGS = 4.5 V 0.750 @ VGS = 3.0 V 1.00 @ VGS = –4.5 V 1.30 @ VGS = –3.0 V ID (A) "1.2 "1.0 "0.85 "0.75 P-Channel –20 S2 TSOP-6 Top View G1 D G2 1 6 S1 D D 2 5 G2 3 4 S2 G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation p (S f (Surface M Mounted t d on FR4 Board) B d) Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "1.2 "0.95 "3.5 1 1.25 0.8 P-Channel –20 "12 "0.85 "0.65 "2.5 –1 Unit V A W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec) Symbol RthJA N- or P- Channel 100 Unit _C/W For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70778 S-55457—Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-1 Si3850DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = –20 V, VGS = 0 V, TJ = 70_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = –5 V, VGS = –4.5 V VGS = 4.5 V, ID = 0.5 A a D i S O S R i Drain-Source On-State Resistance Symbol Test Condition Min Typ Max Unit N-Ch P-Ch 0.6 –0.6 "100 V nA N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 3.0 –2.0 0.38 0.70 0.55 1.10 2.7 1.2 1 –1 10 –10 A 0.500 1.00 0.750 1.30 S 1.2 –1.2 W mA rDS(on) VGS = –4.5 V, ID = –0.5 A VGS = 3.0 V, ID = 0.5 A VGS = –3.0 V, ID = –0.5 A VDS = 10 V, ID = 1.2 A VDS = –10 V, ID = –0.85 A IS = 1 A, VGS = 0 V IS = –1 A, VGS = 0 V Forward Transconductancea Diode Forward Voltagea gfs VSD V Dynamicb Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1 A, di/dt = 100 A/ms IF = –1 A, di/dt = 100 A/ms N-Channel N Ch Channel l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = –10 10 V V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W N-Ch N-Channel N Ch l VDS = 10 V, V VGS = 4.5 4 5 V, V ID = 1 1.2 2A P Ch P-Channel l VDS = –10 V, VGS = –4.5 V ID = –0.85 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.8 1.10 0.25 0.50 0.2 0.2 10 8 20 20 20 10 16 8 40 40 20 15 40 40 40 20 30 15 80 80 ns 2.0 2.5 nC C Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70778 S-55457—Rev. B, 09-Mar-98 Si3850DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 3.5 VGS = 5.0 thru 4.0 V 3.0 I D – Drain Current (A) I D – Drain Current (A) 2.5 3.0 V 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1.5 V 2.0 V 3.5 V 3.5 TC = –55_C 3.0 25_C 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 125_C NĆCHANNEL Transfer Characteristics 2.5 V VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.7 VGS = 3.0 V r DS(on)– On-Resistance ( W ) 0.6 0.5 0.4 0.3 0.2 VGS = 4.5 V C – Capacitance (pF) 120 Capacitance 100 Ciss 80 60 Coss 40 20 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ID – Drain Current (A) 0 0 Crss 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) 5 V GS – Gate-to-Source Voltage (V) VGS = 10 V ID = 1.2 A 4 Gate Charge 2.0 r DS(on)– On-Resistance ( W ) (Normalized) On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1.2 A 1.6 3 1.2 2 0.8 1 0.4 0 0 0.2 0.4 0.6 0.8 0 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70778 S-55457—Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si3850DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) NĆCHANNEL Source-Drain Diode Forward Voltage 4.0 0.8 On-Resistance vs. Gate-to-Source Voltage r DS(on)– On-Resistance ( W ) I S – Source Current (A) TJ = 150_C 1.0 0.6 0.4 TJ = 25_C 0.2 ID = 1.2 A 0.1 0 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.2 30 Single Pulse Power 0.1 V GS(th) Variance (V) ID = 250 mA Power (W) –25 0 25 50 75 100 125 150 –0.0 24 18 –0.1 12 –0.2 6 –0.3 –0.4 –50 0 0.001 0.010 0.100 Time (sec) 1.000 10.000 TJ – Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Imped.


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