Document
Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel 20
rDS(on) (W)
0.500 @ VGS = 4.5 V 0.750 @ VGS = 3.0 V 1.00 @ VGS = –4.5 V 1.30 @ VGS = –3.0 V
ID (A)
"1.2 "1.0 "0.85 "0.75
P-Channel
–20
S2
TSOP-6 Top View
G1 D G2 1 6 S1 D D
2
5
G2
3
4
S2
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation p (S f (Surface M Mounted t d on FR4 Board) B d) Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
20 "12 "1.2 "0.95 "3.5 1 1.25 0.8
P-Channel
–20 "12 "0.85 "0.65 "2.5 –1
Unit
V
A
W _C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)
Symbol
RthJA
N- or P- Channel
100
Unit
_C/W
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70778 S-55457—Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600
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Si3850DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = –20 V, VGS = 0 V, TJ = 70_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = –5 V, VGS = –4.5 V VGS = 4.5 V, ID = 0.5 A
a D i S O S R i Drain-Source On-State Resistance
Symbol
Test Condition
Min
Typ
Max
Unit
N-Ch P-Ch
0.6 –0.6 "100
V nA
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 3.0 –2.0 0.38 0.70 0.55 1.10 2.7 1.2
1 –1 10 –10 A 0.500 1.00 0.750 1.30 S 1.2 –1.2 W mA
rDS(on)
VGS = –4.5 V, ID = –0.5 A VGS = 3.0 V, ID = 0.5 A VGS = –3.0 V, ID = –0.5 A VDS = 10 V, ID = 1.2 A VDS = –10 V, ID = –0.85 A IS = 1 A, VGS = 0 V IS = –1 A, VGS = 0 V
Forward Transconductancea Diode Forward Voltagea
gfs VSD
V
Dynamicb
Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1 A, di/dt = 100 A/ms IF = –1 A, di/dt = 100 A/ms N-Channel N Ch Channel l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = –10 10 V V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W N-Ch N-Channel N Ch l VDS = 10 V, V VGS = 4.5 4 5 V, V ID = 1 1.2 2A P Ch P-Channel l VDS = –10 V, VGS = –4.5 V ID = –0.85 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.8 1.10 0.25 0.50 0.2 0.2 10 8 20 20 20 10 16 8 40 40 20 15 40 40 40 20 30 15 80 80 ns 2.0 2.5 nC C
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
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Document Number: 70778 S-55457—Rev. B, 09-Mar-98
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
3.5 VGS = 5.0 thru 4.0 V 3.0 I D – Drain Current (A) I D – Drain Current (A) 2.5 3.0 V 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1.5 V 2.0 V 3.5 V 3.5 TC = –55_C 3.0 25_C 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 125_C
NĆCHANNEL
Transfer Characteristics
2.5 V
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.7 VGS = 3.0 V r DS(on)– On-Resistance ( W ) 0.6 0.5 0.4 0.3 0.2 VGS = 4.5 V C – Capacitance (pF)
120
Capacitance
100 Ciss
80
60
Coss
40
20 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ID – Drain Current (A) 0 0
Crss
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
5 V GS – Gate-to-Source Voltage (V) VGS = 10 V ID = 1.2 A 4
Gate Charge
2.0 r DS(on)– On-Resistance ( W ) (Normalized)
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 1.2 A
1.6
3
1.2
2
0.8
1
0.4
0 0 0.2 0.4 0.6 0.8
0 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Document Number: 70778 S-55457—Rev. B, 09-Mar-98
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Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) NĆCHANNEL
Source-Drain Diode Forward Voltage
4.0 0.8
On-Resistance vs. Gate-to-Source Voltage
r DS(on)– On-Resistance ( W )
I S – Source Current (A)
TJ = 150_C 1.0
0.6
0.4
TJ = 25_C
0.2
ID = 1.2 A
0.1 0 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V)
0 0 1 2 3 4 5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.2 30
Single Pulse Power
0.1 V GS(th) Variance (V) ID = 250 mA Power (W) –25 0 25 50 75 100 125 150 –0.0
24
18
–0.1
12 –0.2 6
–0.3
–0.4 –50
0 0.001
0.010
0.100 Time (sec)
1.000
10.000
TJ – Temperature (_C) 2 1 Duty Cycle = 0.5
Normalized Thermal Transient Imped.