Dual P-Channel 8-V (D-S) MOSFET
Si3905DV
New Product
Vishay Siliconix
Dual P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.125 @ VGS ...
Description
Si3905DV
New Product
Vishay Siliconix
Dual P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.125 @ VGS = –4.5 V –8 8 0.175 @ VGS = –2.5 V 0.265 @ VGS = –1.8 V
ID (A)
"2.5 "2.0 "1.7
S1
S2
TSOP-6 Top View
G1 1 6 D1 G1 3 mm S2 2 5 S1 G2
G2
3
4
D2
2.85 mm
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Diode Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg
Symbol
VDS VGS
Limit
–8 "8 "2.5 "2.0 "7 –1.05 1.15
Unit
V
A
W 0.73 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board. b. t v 5 sec Document Number: 70973 S-61840—Rev. A, 13-Sep-99 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State
Symbol
RthJA RthJL
Typical
93 130 75
Maximum
110 150 90
Unit
_C/W
2-1
Si3905DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 55_C VDS = v–5 V, VGS = –4.5 V VGS = –4.5 V, ID = –2.5 A
a ...
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