Document
P-Channel 20-V (D-S) MOSFET
Si4423DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = - 4.5 V
- 20 0.009 at VGS = - 2.5 V
0.0115 at VGS = - 1.8 V
ID (A) - 14 - 13 - 12
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4423DY-T1-E3 (Lead (Pb)-free) Si4423DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Game Station
- Load Switch
S
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 14 - 11.5
- 10 -8
Pulsed Drain Current
IDM - 50
Continuous Source Current (Diode Conduction)a
IS
- 2.7
- 1.36
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
3.0 1.5 1.9 0.95
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 33 70 16
Maximum 42 84 21
Unit °C/W
Document Number: 72085 S09-0705-Rev. D, 27-Apr-09
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Si4423DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 600 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 14 A
Drain-Source On-State Resistancea RDS(on)
VGS = - 2.5 V, ID = - 13 A
VGS = - 1.8 V, ID = - 12 A
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 14 A
Diode Forward Voltagea
VSD IS = - 2.7 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 5 V, ID = - 14 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 2.1 A, dI/dt = 100 A/µs
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Min. - 0.4
- 30
Typ.
Max.
- 0.9 ± 100
-1 - 10
0.006 0.0071 0.009
60 - 0.6
0.0075 0.009 0.0115
- 1.1
Unit
V nA µA A
Ω
S V
116 175 16 27 3.2 75 115 165 250 460 700 210 320
105 160
nC Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
VGS = 5 thru 2 V 40
50 40
1.5 V 30 30
I D - Drain Current (A) I D - Drain Current (A)
20
10
0 0
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1234
VDS - Drain-to-Source Voltage (V) Output Characteristics
5
20 TC = 125 °C
10 25 °C - 55 °C
0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
Document Number: 72085 S09-0705-Rev. D, 27-Apr-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.015
12000
RDS(on) - On-Resistance (Ω )
0.012 0.009 0.006 0.003
VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V
C - Capacitance (pF)
10000 8000 6000 4000 2000
0.000 0
8 16 24 32
ID - Drain Current (A) On-Resistance vs. Drain Current
40
0 0
Si4423DY
Vishay Siliconix
Ciss
Crss
Coss
4 8 12 16
VDS - Drain-to-Source Voltage (V) Capacitance
20
5
VDS = 10 V ID = 13 A 4
1.6
VGS = 4.5 V ID = 13 A 1.4
R DS(on) - On-Resistance (Normalized)
V GS - Gate-to-Source Voltage (V)
3 1.2
2 1.0
1 0.8
0 0
100
25 50 75 100
Qg - Total Gate Charge (nC) Gate Charge
125
10 TJ = 150 °C
0.6 - 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature
0.030
0.024 0.018
ID = 13 A
R DS(on) - On-Resistance ( Ω)
I S - Source Current (A)
0.012 1 TJ = 25 °C
0.006
0.1 0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage
1.2
0.000 0.0 1.6 3.2 4.8 6.4 8.0
VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage
Document Number: 72085 S09-0705-Rev. D, 27-Apr-09
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Si4423DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6 100
0.4
ID = 250 µA 0.2
80 60
VGS(th) Variance (V) Power (W)
0.0 40
- 0.2 20
- 0.4 - 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C) Threshold Voltage
100
Limited by RDS(on) * 10
I D - Drain Current (A)
1
.