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SI4423DY Dataheets PDF



Part Number SI4423DY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description P-Channel MOSFET
Datasheet SI4423DY DatasheetSI4423DY Datasheet (PDF)

P-Channel 20-V (D-S) MOSFET Si4423DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0075 at VGS = - 4.5 V - 20 0.009 at VGS = - 2.5 V 0.0115 at VGS = - 1.8 V ID (A) - 14 - 13 - 12 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4423DY-T1-E3 (Lead (Pb)-free) Si4423DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Game Statio.

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P-Channel 20-V (D-S) MOSFET Si4423DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0075 at VGS = - 4.5 V - 20 0.009 at VGS = - 2.5 V 0.0115 at VGS = - 1.8 V ID (A) - 14 - 13 - 12 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4423DY-T1-E3 (Lead (Pb)-free) Si4423DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Game Station - Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 14 - 11.5 - 10 -8 Pulsed Drain Current IDM - 50 Continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.0 1.5 1.9 0.95 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 70 16 Maximum 42 84 21 Unit °C/W Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 1 Si4423DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 600 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 °C On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 14 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 13 A VGS = - 1.8 V, ID = - 12 A Forward Transconductancea gfs VDS = - 10 V, ID = - 14 A Diode Forward Voltagea VSD IS = - 2.7 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = - 10 V, VGS = - 5 V, ID = - 14 A Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω Fall Time tf Source-Drain Reverse Recovery Time trr IF = - 2.1 A, dI/dt = 100 A/µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Min. - 0.4 - 30 Typ. Max. - 0.9 ± 100 -1 - 10 0.006 0.0071 0.009 60 - 0.6 0.0075 0.009 0.0115 - 1.1 Unit V nA µA A Ω S V 116 175 16 27 3.2 75 115 165 250 460 700 210 320 105 160 nC Ω ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 VGS = 5 thru 2 V 40 50 40 1.5 V 30 30 I D - Drain Current (A) I D - Drain Current (A) 20 10 0 0 www.vishay.com 2 1234 VDS - Drain-to-Source Voltage (V) Output Characteristics 5 20 TC = 125 °C 10 25 °C - 55 °C 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.015 12000 RDS(on) - On-Resistance (Ω ) 0.012 0.009 0.006 0.003 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V C - Capacitance (pF) 10000 8000 6000 4000 2000 0.000 0 8 16 24 32 ID - Drain Current (A) On-Resistance vs. Drain Current 40 0 0 Si4423DY Vishay Siliconix Ciss Crss Coss 4 8 12 16 VDS - Drain-to-Source Voltage (V) Capacitance 20 5 VDS = 10 V ID = 13 A 4 1.6 VGS = 4.5 V ID = 13 A 1.4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 3 1.2 2 1.0 1 0.8 0 0 100 25 50 75 100 Qg - Total Gate Charge (nC) Gate Charge 125 10 TJ = 150 °C 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.030 0.024 0.018 ID = 13 A R DS(on) - On-Resistance ( Ω) I S - Source Current (A) 0.012 1 TJ = 25 °C 0.006 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.2 0.000 0.0 1.6 3.2 4.8 6.4 8.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 3 Si4423DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 100 0.4 ID = 250 µA 0.2 80 60 VGS(th) Variance (V) Power (W) 0.0 40 - 0.2 20 - 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on) * 10 I D - Drain Current (A) 1 .


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