SI4427DY

New Product P-Channel 30-V (D-S) MOSFET Si4427DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = –10 V –30 0.0125 @ VGS = –4.5 V 0.0195 @ VGS = –2.5 V ID (A) –13.3 –12.2 –9.8 FEATURES D TrenchFETr Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4427DY-T1 Si4427DY-T1–E3 (Lead (Pb)-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS –30 VGS "12 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg –13.3 –9.4 –10.7 –7.5 –50 –2.5 –1.3 3.0 1.5 1.9 0.9 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71308 S-51452—Rev. B, 01-Aug-05 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 32 68 15 Maximum 42 85 18 Unit _C/W www.vishay.com 1 Si4427DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea...