P-Channel MOSFET
Si4429EDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0105 @ VGS = ...
Description
Si4429EDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0105 @ VGS = –10 V –30 0.0125 @ VGS = –4.5 V 0.0195 @ VGS = –2.5 V
FEATURES
ID (A)
–13.0 –12.0 –9.0
D TrenchFETr Power MOSFET D VGS Surge Protection to 18 V D ESD Protected: 4000 V
APPLICATIONS
D Battery Switch D Load Switch
D
SO-8
S S S G 1 2 3 4 Top View S 8 7 6 5 D G D D D 5.5 kW
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –10.0 IDM IS –2.5 3.0 1.9 –55 to 150 –50 –1.3 1.5 0.9 W _C –7.5 A
Symbol
VDS VGS
10 secs
Steady State
–30 "12
Unit
V
–13.0
–9.4
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70709 S-04712—Rev. A, 24-Sep-01 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
32 68 15
Maximum
42 85 18
Unit
_C/W
1
Si4429EDY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –24 V, VGS = 0 V VD...
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