Document
N-Channel 60 V (D-S) MOSFET
Si4470EY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 0.011 at VGS = 10 V 0.013 at VGS = 6.0 V
ID (A) 12.7 11.7
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Primary Side Switch
D
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
G
Top View
Ordering Information: Si4470EY-T1-E3 (Lead (Pb)-free) Si4470EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
12.7 9.0 10.6 7.5
Pulsed Drain Current
IDM 50
Avalanche Current
L = 0.1 mH
IAS
50
Continuous Source Current (Diode Conduction)a
IS 3.1 1.5
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
3.75 1.85 2.6 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board.
t 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 33 65 17
Maximum 40 80 21
Unit °C/W
Document Number: 71606 S10-2137-Rev. D, 20-Sep-10
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Si4470EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 12 A VGS = 6.0 V, ID = 10 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 10 A
Diode Forward Voltagea
VSD IS = 3.0 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 30 V, VGS = 10 V, ID = 12 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = 30 V, RL = 30 ID 1.0 A, VGEN = 10 V, Rg = 6
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 3.0 A, dI/dt = 100 A/µs
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
2.0 ± 100 1 5
50 0.009 0.011 0.0105 0.013 50 0.75 1.2
Unit
V nA µA A S V
0.25
46 11.5 11.5 0.85 16 12 50 30 40
70
1.4 25 18 75 45 60
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50 VGS = 10 V thru 5 V
40
50 40
I D - Drain Current (A) I D - Drain Current (A)
30 30
20
10
2 V, 3 V
4V
0 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) Output Characteristics
20
TC = 125 °C 10
25 °C
- 55 °C
0 0123456
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
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Document Number: 71606 S10-2137-Rev. D, 20-Sep-10
Si4470EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
4000
C - Capacitance (pF)
RDS(on) - On-Resistance ()
0.015 0.010
VGS = 6 V
VGS = 10 V
3500 3000 2500 2000
Ciss
1500
0.005
0.000 0
10 20 30 40 50
1000 500
Coss
0 Crss 0 15 30 45
ID - Drain Current (A) On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V) Capacitance
60
VGS - Gate-to-Source Voltage (V)
10 VDS = 30 V ID = 5 A
8
6
4
2
0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge
50
RDS(on) - On-Resistance (Normalized)
2.1
VGS = 10 V 1.8 ID = 5 A
1.5
1.2
0.9
0.6
0.3
0.0 - 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature
100 0.10
RDS(on) - On-Resistance ()
I S - Source Current (A)
TJ = 150 °C
TJ = 25 °C
10
0.08 0.06 0.04
ID = 5 A
0.02
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage
0.00 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage
Document Number: 71606 S10-2137-Rev. D, 20-Sep-10
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Si4470EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0 60
0.6 ID = 250 µA
0.2
50 40
Power (W)
VGS(th) Variance (V)
- 0.2 30
- 0.6 20
- 1.0 10
- 1.4 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) Threshold Voltage
2
1 Duty Cycle = 0.5
0 0.01
0.1 1 Time (s)
10
Single Pulse Power
100
Normalized Effective Transient Thermal Impedanc.