DatasheetsPDF.com

SI4470EY Dataheets PDF



Part Number SI4470EY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SI4470EY DatasheetSI4470EY Datasheet (PDF)

N-Channel 60 V (D-S) MOSFET Si4470EY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.011 at VGS = 10 V 0.013 at VGS = 6.0 V ID (A) 12.7 11.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D S1 S2 S3 G4 SO-8 8D 7D 6D 5D G Top View Ordering Information: Si4470EY-T1-E3 (Lead (Pb)-free) Si4470EY-T1-GE3 (Lead (Pb)-free and.

  SI4470EY   SI4470EY


Document
N-Channel 60 V (D-S) MOSFET Si4470EY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.011 at VGS = 10 V 0.013 at VGS = 6.0 V ID (A) 12.7 11.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D S1 S2 S3 G4 SO-8 8D 7D 6D 5D G Top View Ordering Information: Si4470EY-T1-E3 (Lead (Pb)-free) Si4470EY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 12.7 9.0 10.6 7.5 Pulsed Drain Current IDM 50 Avalanche Current L = 0.1 mH IAS 50 Continuous Source Current (Diode Conduction)a IS 3.1 1.5 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.75 1.85 2.6 1.3 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t  10 s Steady State Steady State Symbol RthJA RthJF Typical 33 65 17 Maximum 40 80 21 Unit °C/W Document Number: 71606 S10-2137-Rev. D, 20-Sep-10 www.vishay.com 1 Si4470EY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 12 A VGS = 6.0 V, ID = 10 A Forward Transconductancea gfs VDS = 15 V, ID = 10 A Diode Forward Voltagea VSD IS = 3.0 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 30 V, VGS = 10 V, ID = 12 A Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = 30 V, RL = 30  ID  1.0 A, VGEN = 10 V, Rg = 6  Fall Time tf Source-Drain Reverse Recovery Time trr IF = 3.0 A, dI/dt = 100 A/µs Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Min. Typ. Max. 2.0 ± 100 1 5 50 0.009 0.011 0.0105 0.013 50 0.75 1.2 Unit V nA µA A  S V 0.25 46 11.5 11.5 0.85 16 12 50 30 40 70 1.4 25 18 75 45 60 nC  ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 VGS = 10 V thru 5 V 40 50 40 I D - Drain Current (A) I D - Drain Current (A) 30 30 20 10 2 V, 3 V 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) Output Characteristics 20 TC = 125 °C 10 25 °C - 55 °C 0 0123456 VGS - Gate-to-Source Voltage (V) Transfer Characteristics www.vishay.com 2 Document Number: 71606 S10-2137-Rev. D, 20-Sep-10 Si4470EY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 4000 C - Capacitance (pF) RDS(on) - On-Resistance () 0.015 0.010 VGS = 6 V VGS = 10 V 3500 3000 2500 2000 Ciss 1500 0.005 0.000 0 10 20 30 40 50 1000 500 Coss 0 Crss 0 15 30 45 ID - Drain Current (A) On-Resistance vs. Drain Current VDS - Drain-to-Source Voltage (V) Capacitance 60 VGS - Gate-to-Source Voltage (V) 10 VDS = 30 V ID = 5 A 8 6 4 2 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge 50 RDS(on) - On-Resistance (Normalized) 2.1 VGS = 10 V 1.8 ID = 5 A 1.5 1.2 0.9 0.6 0.3 0.0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 100 0.10 RDS(on) - On-Resistance () I S - Source Current (A) TJ = 150 °C TJ = 25 °C 10 0.08 0.06 0.04 ID = 5 A 0.02 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 71606 S10-2137-Rev. D, 20-Sep-10 www.vishay.com 3 Si4470EY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 60 0.6 ID = 250 µA 0.2 50 40 Power (W) VGS(th) Variance (V) - 0.2 30 - 0.6 20 - 1.0 10 - 1.4 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) Threshold Voltage 2 1 Duty Cycle = 0.5 0 0.01 0.1 1 Time (s) 10 Single Pulse Power 100 Normalized Effective Transient Thermal Impedanc.


SI4465DY SI4470EY SI4473BDY


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)