Document
Si4473BDY
New Product
Vishay Siliconix
P-Channel 14-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−14
FEATURES
ID (A)
−13 −10
rDS(on) (W)
0.011 @ VGS = −4.5 V 0.018 @ VGS = −2.5 V
D TrenchFETr Power MOSFET D 100% Rg Tested
APPLICATION
D Battery Switch for Portable Devices
S
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4473BDY—E3 (lLead Free) Si4473BDY-T1—E3 (Lead Free with Tape and Reel) 8 7 6 5 D D D D G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
−14 "12
Unit
V
−13 −9.9 −50 −2.3 2.5 1.6 −55 to 150
−9.8 −7.8 A
−1.34 1.5 0.94 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72691 S-32676—Rev. A, 29-Dec-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
40 70 15
Maximum
50 85 18
Unit
_C/W
1
Si4473BDY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = −14 V, VGS = 0 V VDS = −14 V, VGS = 0 V, TJ = 70_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −13 A VGS = −2.5 V, ID = −2.5 A VDS = −17 V, ID = −13 A IS = −2.3 A, VGS = 0 V −30 0.009 0.014 45 −0.7 −1.1 0.011 0.018 −0.6 −1.4 "100 −1 −10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2.3 A, di/dt = 100 A/ms VDD = −15 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, RG = 6 W f = 1 MHz 1.5 VDS = −10 V, VGS = −4.5 V, ID = −13 A 53 11 22 2.7 55 95 140 140 81 4.5 85 145 210 210 120 ns W 80 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 5 thru 3 V 40 I D − Drain Current (A) I D − Drain Current (A) 2.5 V 30 40 50
Transfer Characteristics
30
20 2V 10 1.5 V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V)
20 TC = 125_C 10 25_C 0 0.0 −55_C 1.5 2.0 2.5 3.0
0.5
1.0
VGS − Gate-to-Source Voltage (V) Document Number: 72691 S-32676—Rev. A, 29-Dec-03
www.vishay.com
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Si4473BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05 r DS(on) − On-Resistance ( W ) 6400 5600 C − Capacitance (pF) 0.04 4800 4000 3200 2400 1600 800 0.00 0 10 20 30 40 50 0 0 2 4 6 8 10 12 14 Crss Coss Ciss
Vishay Siliconix
Capacitance
0.03 VGS = 2.5 V VGS = 4.5 V 0.01
0.02
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 13 A 4 r DS(on) − On-Resistance (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 10 20 30 40 50 60 Qg − Total Gate Charge (nC) 0.6 −50
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 13 A
3
2
1
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.060 0.050 0.040
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
ID = 13 A 0.030 ID = 2.5 A 0.020 0.010 0.000
TJ = 25_C
1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD − Source-to-Drain Voltage (V)
VGS − Gate-to-Source Voltage (V)
Document Number: 72691 S-32676—Rev. A, 29-Dec-03
www.vishay.com
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Si4473BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 30 25 ID = 250 mA Power (W) 20
Single Pulse Power, Junction-to-Ambient
0.4 V GS(th) Variance (V)
0.2
15 10
0.0
−0.2
5
−0.4 −50
−25
0
25
50
75
100
125
150
0 10−2
10−1
1 Time (sec)
10
100
600
TJ − Temperature (_C)
100 rDS(on) Limited 10 I D − Drain Current (A)
Safe Operating Area
IDM Limited
P(t) = 0.001 P(t) = 0.01
1
ID(on) Limited
P(t) = 0.1 P(t) = 1
0.1
TA = 25_C Single Pulse BVDSS Limited
P(t) = 10 dc
0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) 4.