SI4500BDY

Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.020 at VGS = 4.5 V 0.030 at VGS = 2.5 V P-Channel - 20 0.060 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A) 9.1 7.5 - 5.3 - 4.1 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC S2 S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8D 7D 6D 5D G2 D G1 Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free) Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C)a,b TA = 25 °C TA = 70 °C ID 9.1 7.3 6.6 - 5.3 - 3.8 5.3 - 4.9 - 3.1 Pulsed Drain Current IDM 30 - 20 Continuous Source Current (Diode Conduction)a,b IS 2.1 1.1 - 2.1 - 1.1 Maximum Power Dissipationa,b TA = 25 °C TA = 70 °C PD 2.5 1.6 1.3 0.8 2.5 1.6 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF N-Channel Typ. Max. 40 50 75 95 20 22 P-Channel Typ. Max. 41 50 75 95 23 26 Unit °C...