Si4565DY

New Product Si4565DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) N-Channel 40 0.040 at VGS = 10 V 0.045 at VGS = 4.5 V 0.054 at VGS = –10 V P-Channel –40 0.072 at VGS = –4.5 V ID (A) 5.2 4.9 –4.5 –3.9 Qg (Typ) 8 9 FEATURES D TrenchFETr Power MOSFET D 100 % Rg Tested D UIS Tested APPLICATIONS D CCFL Inverter RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4565DY–T1–E3 (Lead (Pb)–free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) N-Channel P-Channel Parameter Symbol 10 secs Steady State 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 _C)a TA = 25 _C TA = 70 _C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipatioa TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 40 –40 "12 "16 5.2 3.9 –4.5 –3.3 4.2 3.1 –3.6 –2.7 30 1.7 0.9 –1.7 –0.9 13 16 8.5 13 2.0 1.1 2 1.1 1.3 0.7 1.3 0.7 –55 to 150 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t v 10 sec Steady State Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73224 S-60383—Rev. B, 13-Mar-06 Symbol RthJA RthJF N-Ch...