Document
Si4828DY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
Channel-1 30 Channel-2
rDS(on) (W)
0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0135 @ VGS = 10 V 0.0175 @ VGS = 4.5 V
ID (A)
7.5 6.5 9.8 8.5
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1 P Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Channel-2 10 secs
30 "20
S b l Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
Steady State
U i Unit
V
7.5 6 30 1.8 2 1.78
5.8 4.6
9.8 7.8 40
7.5 6 A
1.06 1.17 0.75 –55 to 150
1.8 2 1.28
1.06 1.17 0.75 W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel-1 P Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71181 S-00983—Rev. A, 15-May-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady-State Steady-State
Channel-2 Typ
53 89 34
S b l Symbol
RthJA RthJC
Typ
55 89 36
Max
62.5 107 45
Max
62.5 107 42
U i Unit
_C/W
1
Si4828DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter Static
Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A
a D i S O S R i Drain-Source On-State Resistance
Symbol
Test Condition
Min
Typ
Max
Unit
Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2
0.8 1.0 100 100 1 1 15 15 20 30 0.018 0.011 0.024 0.0145 17 30 0.72 0.72 1.1 1.1 0.022 0.0135 0.030 0.0175
V
Gate-Body Leakage
nA
mA
A
rDS(on)
VGS = 10 V, ID = 9.8 A VGS = 4.5 V, ID = 6.5 A VGS = 4.5 V, ID = 8.5 A VDS = 15 V, ID = 7.5 A VDS = 15 V, ID = 9.8 A IS = 1.8 A, VGS = 0 V IS = 1.8 A, VGS = 0 V
W
Forward Transconductancea Diode Forward Voltagea
gfs VSD
S
V
Dynamicb
Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.8 A, di/dt = 100 A/ms IF = 1.8 A, di/dt = 100 mA/ms Ch Channel l1 Channel-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 15 V V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch Channel-1 Channel l1 VDS = 15 V, VGS = 5 V, ID = 7.5 A Channel-2 VDS = 15 V V, VGS = 5 V, V ID = –9.8 98A Gate-Drain Charge Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 8.0 23 1.75 8.6 3.2 7.2 10 17 5 10 26 60 10 17 30 40 20 30 10 20 50 100 16 30 60 70 ns 12 34 nC C
Gate-Source Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
www.vishay.com S FaxBack 408-970-5600
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Document Number: 71181 S-00983—Rev. A, 15-May-00
Si4828DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 10 thru 4 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 30
Vishay Siliconix
CHANNELĆ1
Transfer Characteristics
18
3V
18
12
12 TC = 125_C 6 25_C
6 1V 0 0 2 4 6 8 10 2V
–55_C 2.0 2.5 3.0 3.5 4.0
0 0 0.5 1.0 1.5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05 1000
Capacitance
DS(on) – On-Resistance ( W )
C – Capacitance (pF)
0.04
800 Ciss 600
0.03 VGS = 4.5 V 0.02 VGS = 10 V
400 Coss 200 Crss
r
0.01
0 0 6 12 18 24 30
0 0 6 12 18 24 30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 Qg – Total Gate Charge (nC) Document Number: 71181 S-00983—Rev. A, 15-May-00 0.4 –50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 7.5 A
6
4
2
r DS(on) – On-Resistance (W ) (Normalized)
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600
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Si4828DY
Vishay Siliconix
New Product
CHANNELĆ1
On-Resistance vs. Gate-to-Source Voltage
0.10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
DS(on) – On-Resistance ( W )
0.08
I S – Source Current (A)
TJ = 150_C 10
0.06
TJ = 25_C
0.04 ID = 7.5 A 0.02
r
1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0 0 2 4 6 8 10
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.6 0.4 V GS(th) Variance (V) 0.2 –0.0 –0.2 –0.4 –0.6 20 –0.8 –1 –50 0 –25 0 25 50 75 100 TJ – Temperature (_C) 125 150 ID = 250 mA Power (W) 80 100
Single Pulse Power, Junction-to-Ambient
60
40
0.001
0.01
0.1 Time (sec)
1
10
Normalized Thermal Transient Impedance, J.