SI4842DY

N-Channel 30-V (D-S) MOSFET Si4842DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0045 @ VGS = 10 V 0.006 @ VGS = 4.5 V ID (A) 23 19 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4842DY Si4842DY-T1 (with Tape and Reel) Si4842DY—E3 (Lead (Pb)-Free) Si4842DY-T1-E3 (Lead (Pb)-Free with Tape and Reel) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 20 23 15 19 12 60 2.9 1.3 50 125 3.5 1.6 2.2 1 --55 to 150 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. t ≤ 10 sec Steady State Steady State Document Number: 71325 S-41576—Rev. D, 23-Aug-04 Symbol RthJA RthJF Typical 29 67 13 Maximum 35 80 16 Unit _C/W www.vishay.com 1 Si4842DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-...