SI4848DY

N-Channel 150-V (D-S) MOSFET Si4848DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.085 at VGS = 10 V 0.095 at VGS = 6.0 V ID (A) 3.7 3.5 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4848DY-T1-E3 (Lead (Pb)-free) Si4848DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 3.7 2.7 3.0 2.1 Pulsed Drain Current IDM 25 Avalanche Current L = 0.1 mH IAS 10 Continuous Source Current (Diode Conduction)a IS 2.5 1.3 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.0 1.9 1.5 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 35 68 18 Maximum 42 82 23 Unit °C/W Document Number: 71356 S09-0870-Rev. C, 18-May-09 www.vishay.com 1 Si4848DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ga...