N-Channel MOSFET
Si4880DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0085 ...
Description
Si4880DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0085 at VGS = 10 V 0.014 at VGS = 4.5 V
ID (A) ± 13 ± 10
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETS High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/EC
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
Ordering Information: Si4880DY-T1-E3 (Lead (Pb)-free) Si4880DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current (10 µs Pulse Width)
TA = 25 °C TA = 70 °C
ID IDM
Continuous Source Current (Diode Conduction)a, b
IS
Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
PD TJ, Tstg
Limit 30 ± 25 ± 13 ± 10 ± 50 2.3 2.5 1.6
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Notes: a. Surface mounted on FR4 board. b. t ≤ 10 s.
t ≤ 10 s Steady State
Symbol RthJA
Typical 70
Maximum 50
Unit V
A
W °C
Unit °C/W
Document Number: 70857 S09-0869-Rev. C, 18-May-09
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Si4880DY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-So...
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