SI4890DY

Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.012 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) ± 11 ±9 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4890DY-T1-E3 (Lead (Pb)-free) Si4890DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID Pulsed Drain Current (10 µs Pulse Width) IDM Continuous Source Current (Diode Conduction)a, b IS Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 25 ± 11 ±9 ± 50 2.3 2.5 1.6 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State Symbol RthJA Typical 70 Maximum 50 Unit V A W °C Unit °C/W Document Number: 70855 S09-0869-Rev. B, 18-May-09 www.vishay.com 1 Si4890DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ...