Document
Dual P-Channel 12-V (D-S) MOSFET
Si4933DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) (Ω) 0.014 at VGS = - 4.5 V 0.017 at VGS = - 2.5 V 0.022 at VGS = - 1.8 V
ID (A) - 9.8 - 8.9 - 7.8
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Load Switching
SO-8
S1 1 G1 2 S2 3 G2 4
Top View
8 D1 7 D1 6 D2 5 D2
Ordering Information: Si4933DY-T1-E3 (Lead (Pb)-free) Si4933DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 G1
S2 G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS - 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 9.8 - 7.8
- 7.4 - 5.9
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.0 1.3
1.1 0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 45 85 26
Maximum 62.5 110 35
Unit °C/W
Document Number: 71980 S09-0867-Rev. D, 18-May-09
www.vishay.com 1
Si4933DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 500 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 9.8 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 8.9 A
VGS = - 1.8 V, ID = - 5.0 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 9.8 A
Diode Forward Voltagea Dynamicb
VSD IS = - 1.7 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 6 V, VGS = - 4.5 V, ID = - 9.8 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 1.7 A, dI/dt = 100 A/µs
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
- 0.40 - 30
0.0115 0.014 0.018
40 - 0.7
- 1.0 ± 100
-1 -5
0.014 0.017 0.022
- 1.2
46 70 6.0 13 35 55 47 70 320 480 260 390 210 315
Unit V nA µA A Ω S V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to a.