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SI4933DY Dataheets PDF



Part Number SI4933DY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual P-Channel MOSFET
Datasheet SI4933DY DatasheetSI4933DY Datasheet (PDF)

Dual P-Channel 12-V (D-S) MOSFET Si4933DY Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.014 at VGS = - 4.5 V 0.017 at VGS = - 2.5 V 0.022 at VGS = - 1.8 V ID (A) - 9.8 - 8.9 - 7.8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching SO-8 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4933DY-T1-E3 (Lead (Pb)-free) Si4933DY-T1-GE3 (Lead (Pb)-.

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Dual P-Channel 12-V (D-S) MOSFET Si4933DY Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.014 at VGS = - 4.5 V 0.017 at VGS = - 2.5 V 0.022 at VGS = - 1.8 V ID (A) - 9.8 - 8.9 - 7.8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching SO-8 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4933DY-T1-E3 (Lead (Pb)-free) Si4933DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 9.8 - 7.8 - 7.4 - 5.9 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.3 1.1 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 45 85 26 Maximum 62.5 110 35 Unit °C/W Document Number: 71980 S09-0867-Rev. D, 18-May-09 www.vishay.com 1 Si4933DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 500 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 9.8 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 8.9 A VGS = - 1.8 V, ID = - 5.0 A Forward Transconductancea gfs VDS = - 10 V, ID = - 9.8 A Diode Forward Voltagea Dynamicb VSD IS = - 1.7 A, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs VDS = 6 V, VGS = - 4.5 V, ID = - 9.8 A Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω Fall Time tf Source-Drain Reverse Recovery Time trr IF = - 1.7 A, dI/dt = 100 A/µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Min. Typ. Max. - 0.40 - 30 0.0115 0.014 0.018 40 - 0.7 - 1.0 ± 100 -1 -5 0.014 0.017 0.022 - 1.2 46 70 6.0 13 35 55 47 70 320 480 260 390 210 315 Unit V nA µA A Ω S V nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to a.


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