SI4940DY

Dual N-Channel 40-V (D-S) MOSFET Si4940DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.036 at VGS = 10 V 0.059 at VGS = 4.5 V ID (A) 5.7 4.4 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4940DY-T1-E3 (Lead (Pb)-free) Si4940DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 5.7 4.2 4.5 3.4 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.8 0.9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.1 1.3 1.1 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 50 90 28 Maximum 60 110 34 Unit °C/W Document Number: 71649 S09-0704-Rev. D, 27-Apr-09 www.vishay.com 1 Si4940DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = ...