SI4946EY

Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.055 @ VGS = 10 V 0.075 @ VGS = 4.5 V ID (A) 4.5 3.9 FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested Pb-free Available SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel) Si4946EY—E3 (Lead (Pb)-Free) Si4946EY-T1—E3 (Lead (Pb)-Free with Tape and Reel) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 60 "20 4.5 3.8 30 2 12 7.2 2.4 1.7 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70157 S-50524—Rev. E, 28-Mar-05 Symbol RthJA Limit 62.5 Unit _C/W www.vishay.com 1 Si4946EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Re...