SI4947ADY

Dual P-Channel 30-V (D-S) MOSFET Si4947ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.080 at VGS = - 10 V 0.135 at VGS = - 4.5 V ID (A) - 3.9 - 3.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4947ADY-T1-E3 (Lead (Pb)-free) Si4947ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 3.9 - 3.1 - 3.0 - 2.4 Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.7 - 1.0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.2 1.3 0.76 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 54 87 34 Maximum 62.5 105 45 Unit °C/W Document Number: 71101 S09-0870-Rev. D, 18-May-09 www.vishay.com 1 Si4947ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage ...